IARE B.Tech Engineering Physics Previous Question Papers : Institute Of Aeronautical Engineering
Name of the Organisation : Institute Of Aeronautical Engineering
Exam : B.Tech I Semester End Examinations
Category : Common for (CSE | IT | ECE | EEE)
Subject : Engineering Physics
Document Type : Previous Question Papers
Website : https://www.iare.ac.in/?q=node/2222
Download Previous/ Old Question Papers :
Dec 2016 : https://www.pdfquestion.in/uploads/26065-PHY16.pdf
Feb 2017 : https://www.pdfquestion.in/uploads/26065-PHYfeb.pdf
Jul 2017 : https://www.pdfquestion.in/uploads/26065-PHYjul.pdf
Dec 2017 : https://www.pdfquestion.in/uploads/26065-PHY17.pdf
IARE B.Tech Engineering Previous Physics Question Papers
B.Tech I Semester End Examinations (Regular) – December, 2017
Regulation : IARE – R16
Common for (CSE | IT | ECE | EEE)
Related : Institute Of Aeronautical Engineering B.Tech Engineering Chemistry Question Paper : www.pdfquestion.in/26060.html
Time: 3 Hours
Max Marks: 70
Instruction
** Answer ONE Question from each Unit
** All Questions Carry Equal Marks
** All parts of the question must be answered in one place only
UNIT – I
1. (a) Define Polarizability and derive an expression for electronic polarizability. [10M]
(b) A solid elemental dielectric with density 3 × 1028atoms/m3 shows electronic polarizability of 10??40 farad m2.Assuming internal electric field to be Lorentz field, calculate the dielectric constant of the material. [4M]
2. (a) Define magnetic moment. Explain the origin of magnetic moment in dia and para magnetic substances. [10M]
(b) The magnetic field intensity in a piece of ferric oxide is 106 amp/m. If susceptibility of the material is 1.5 × 10??3, calculate the magnetization of material. [4M]
UNIT – II
3. (a) What are Einstein’s coefficients? Explain the main components of any laser system. [10M]
(b) Find the ratio of population of two energy levels in a laser if the transition between them produces light of wavelength 694.3 nm. Assume the ambient temperature to the 27C. [4M]
4. (a) Describe the construction and working of semiconductor diode laser with energy level diagram. [10M]
(b) A ruby laser emits a pulse of 20 ns duration with average power per pulse being 100 KW. If the numbers of photons in each pulse is 6.98 x 1015. Calculate the wavelength of photons. [4M]
UNIT – III
5. (a) Explain briefly bottom-up fabrication of nanomaterial by sol-gel method. [10M]
(b) Explain briefly characterization of nonmaterial by TEM. [4M]
6. (a) What are carbon nanotubes. Discuss the important applications of nanotechnology. [10M]
(b) Explain briefly quantum dots of the nanoworld. [4M]
UNIT – IV
7. (a) State the deBroglie hypothesis. Describe Davisson and Germer’s experiment for confirmation of deBroglie hypothesis with neat sketch. [10M]
(b) Find the kinetic energy and group velocity of an electron with deBroglie wavelength of 0.2 nm. [4M]
8. (a) State the Heisenberg’s uncertainity principle. Obtain an expression time independent Schrodinger wave equation in one dimension. [10M]
(b) A particle of mass 0.65 MeV/c2 has a kinetic energy of 80 eV. Calculate the deBroglie wavelength and group velocity.
UNIT – V
9. (a) Write short notes on direct and indirect band gap semiconductors. [8M]
(b) Explain the effect of temperature and dopant on the Fermi level in a semiconductor. [6M]
10. (a) What are the classification of solids. Derive the expression for thermal equilibrium hole concentration (p) in an semiconductor. [10M]
(b) The energy gap of Ga As is 1.42 eV. The effective masses of electrons and holes are:0.067 m0 and 0.48 m0 respectively. Calculate the concentration of holes at 300 K. [4M]
July, 2017 :
Time: 3 Hours
Max Marks: 70
UNIT – I :
1. (a) Define the terms dipole moment and polarization. Discuss the different polarizations mechanisms in dielectrics. [8M]
(b) If a NaCl crystal is subjected to an electric field of 1000 V/m and the resulting polarization is 4:3 10??8 C/m2, calculate the dielectric constant of NaCl. [6M]
2. (a) What is internal field? Derive an equation for internal field in case of one dimensional array of atoms in dielectric solids. [8M]
(b) A silicon material is subjected to a magnetic field of strength 1000 A/m. If the magnetic susceptibility of silicon is -0.3×10??5, calculate its magnetization. Also evaluate the magnetic flux density of the field inside the material. [6M]
UNIT – II :
3. (a) Obtain an expression for energy density of radiation under equilibrium condition in terms of Einstein coefficients. [8M]
(b) Explain the three major engineering applications of laser. [6M]
4. (a) Explain the construction of He-Ne laser with neat diagram.Discuss its working in detail with energy level diagram. [8M]
(b) Calculate the energy difference in eV between the two energy levels of Neon atoms of He-Ne laser if the transition between these levels results in emission of light of wavelength = 632.8 nm [6M]
UNIT – III :
5. (a) What are nanomaterials? Explain their electrical and magnetic properties. [7M]
(b) Explain briefly quantum confinement nature of nano materials. [7M]
6. (a) Explain qualitatively why nanomaterials are significantly different from bulk materials of the same chemical composition. [7M]
(b) Explain briefly chemical vapour deposition method of fabrication of nano materials with neat sketch. [7M]
UNIT – IV :
7. (a) What are the properties of wave functions? Obtain the expression energy Eigen values an energy functions for a practice in one dimensional potential well of infinite height. [7M]
(b) What are matter waves? Derive the expression for de-Broglie wavelength. [7M]
8. (a) Describe Davisson and Germer experiment to verify matter waves. [7M]
(b) An electron is bond in one dimensional potential well of width 0.12 nm. Find the energy values in the ground state and also the first two excited state in eV. [7M]
UNIT – V :
9. (a) Define Fermi level in case of semiconductors and mention its position in intrinsic and extrinsic semiconductors at 0 K. [7M]
(b) The effective density of states for electrons and holes in silicon at 300 K are: 2:8 1019cm??3 and 1:04 1019cm??3 respectively. The energy gap is 1.1 eV. Calculate the intrinsic carrier concentration at 450 K. [7M]
10. (a) State and explain Hall effect and derive the expression for Hall coefficient. [8M]
(b) A silicon plate of thickness 1mm, breadth 10mm and length 100mm is placed in a magnetic field of 0:5wb/m2 acting perpendicular to its thickness. If 10??2 A current flows along its length, calculate Hall voltage developed if Hall coefficient is 3:66 10??4m3/coulomb. [6M]