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University : Teerthanker Mahaveer University
College : Teerthanker Mahaveer College of Engineering
Degree : B.Tech
Subject : EEC101 Basic Electronics Engineering
Semester : I
Document Type : Question Paper
Website : tmu.ac.in

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Basic Electronics Engineering :

B.Tech I SEMESTER EXAMINATION 2010-11
Course Code : EEC101
Paper ID: 0211108

Related : Teerthanker Mahaveer Medical College & Research Centre EAS103 Chemistry B.Tech Question Paper : www.pdfquestion.in/5764.html

Time : 3 Hours
Max. Marks: 75
Note : Attempt six questions in all. Q. No. 1 is compulsory.
1. Answer any five of the following (limit your answer in 50 words). (3×5=15)
a) Explain the formation of depletion region at P-N junction.
b) Find the reverse saturation current of a Si diode at 50°C temperature if the reverse saturation current of this diode at 27°C is 1 µA.

c) Define and with respect to BJT and derive the relationship between them.
d) How is an FET used as voltage variable resistor-
e) What are the characteristics of an ideal operational amplifier-

f) Find the output voltage of the following op-amp circuit shown in fig. (1).
g) Convert the following numbers as indicated : i) (25)10 = ( )2 ii) (A6B)16 = ( )2
h) Represent AND and OR gate using NAND gate only.

2.a) Draw the forward and reverse characteristics of Ge diode and a Si diode. Explain and compare them. (6)
b) Find RLmax, RLmin, ILmax and ILmin for the given zener regulator circuit if the required output voltage across RL is 5V and IZmax = 0.8mA Vz=5V in fig (2). (6)

3.a) Draw the circuit of full wave bridge rectifier and derive the following parameters- (6) i) Average value of O/P voltage.ii) Ripple factor iii) PIV.
b) Draw and explain the input and output characteristic of CE configuration of NPN transistor. (6)

4.a) Find IC, IB, IE and operating point of the transistor in the following circuit in fig.(3) if = 100. (6)
b) For a CE amplifier circuit with h-parameters (6) hie = 1.1k, hre = 2.5×10-4 hfe = 50, hoe = 25µA/V and load resistance RL = 4k , source resistance Rs. = 10k Calculate Av , Ai, Ri and Ro.

5.a) Sketch the structure of a n type channel depletion type MOSFET and explain its principle of operation with neat diagram. (6)
b) Determine the following for n-channel JFET in fig. (5) i) IDQ ii) VDS iii) VD iv) Vs

B.Tech I (First) Semester Examination 2015-16 :
Course Code : EEC101
Paper ID : 0962406
Time : 3 Hours
Max. Marks : 70
Max Marks : 75
Note : Attempt six questions in all. Q. No. 1 is compulsory.
1. Answer any five of the following (limit your answer to 50 words). (4×5=20)
a) Does a hole in a semiconductor contribute to a flow of current? If yes, how and if no, how?
b) Derive the relationship between β and α.

c) Draw the ideal and practical semiconductor diode characteristics.
d) What are called universal gates? Why are they called so?
e) What is meant by duality in Boolean algebra?

f) What is the need for biasing a transistor?
g) Define left hand rule.
h) Define self and mutual inductance.

2. Draw and explain input /output characteristics of CB configuration of BJT. (10)
3. Discuss the half wave and full wave p-n junction rectifiers. (10)
4. Compute Ri & Ro of single transistor CE amplifier. (10)

5. Draw a neat diagram of full wave bridge rectifier and explain its working. (10)
6. A logic circuit implements following Boolean function F(A,C,D) = A’C + AC’D’. It is found that the circuit input combination A=C=1 can never occur. Find a simpler expression for F using proper don’t care conditions. (10)
7. For the given network shown in figure below determine Ic, Vce, VB and Vc. (10)

B.Tech I (First) Semester Examination 2014-15 :
1. Answer any five of the following (limit your answer to 50 words). (4×5=20)
a) Draw the Energy band diagram.
b) Define concept of pinch off in JFET.

c) Write the current gain of CB, CE configurations.
d) Discuss the Concept of ideal operational amplifier.
e) Concept of universal gates.

f) Sketch the V-I characteristics Diode.
g) Calculate the Av for Inverting amplifier.
h) (010001001)2 = (——————-)16.

2. a) Determine Vo and required PIV rating of each of the diodes of the following circuit. (5)
b) Determine Vo for the following circuit. Also name the configuration. (5)
3. For the Zener diode network shown in figure below determine VL, VR, I2 and IR. (10)

4. a) What are the advantage of the FET over a BJT? Define pinch of voltage and drain resistance of FET. (5)
b) Write the characteristics of an ideal Op-Amp. (5)
5. Draw a neat diagram of full wave bridge rectifier and explain its working. (10)